Performance analysis of Cu/CNT-based TSV: impact on crosstalk and power

This paper presents a new approach to implement compact resistance–inductance–capacitance–conductance (RLCG) model for carbon nanotube (CNT) and Cu-based differently shaped through-silicon vias (TSVs) in 3-D ICs. The primarily comprises the effect of bump, inter-metal dielectric, eddy currents. Using proposed model, mathematical formulation coaxial-, cylindrical-, tapered-based via parasitics is derived using concept partial inductance, sectioning laterally into infinitesimally thin slices triangular inter-tube assemblage, respectively. analytical validated against fabrication-based experimental results subsequently employed crosstalk-induced delay, peak noise, power losses analysis. Additionally, further validation, S parameter Pi-based derived, compared with an electromagnetic simulator benchmark model. consistency between EM simulation-based confirms validity A significant improvement losses, crosstalk, noise can be observed CNT-based tapered TSV structures. it shown that, irrespective height, average signal transmission, reflection loss tapered-shaped 15-shell CNT bundle are reduced by 22.82, 27.80, 47.63 33.71%, respectively, Cu.